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| RF2369 0 RoHS Compliant & Pb-Free Product Typical Applications * CDMA/Cellular Bypass LNA * CDMA/Cellular Bypass Driver Amplifier * General Purpose Amplification * Commercial and Consumer Systems 3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER Product Description The RF2369 is a switchable low noise amplifier with a very high dynamic range designed for digital cellular applications. The device functions as an outstanding front end low noise amplifier. When used as an LNA, the bias current can be set externally. When used as a PA driver, the IC can operate directly from a single cell Li-ion battery and includes a power down feature that can be used to completely turn off the device. The IC is featured in a standard SOT 6-lead plastic package. 1.80 1.40 0.50 0.35 0.10 MAX. TEXT* 1.90 3.10 2.70 3.00 2.60 Shaded lead is pin 1. Dimensions in mm. 0.90 0.70 1.30 1.00 9 1 0.25 0.10 0.37 MIN. *When Pin 1 is in upper left, text reads downward (as shown). Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: SOT 6-Lead Features * Low Noise and High Intercept Point * Adjustable Bias Current * LNA Bypass Loss is +2dB * 150MHz to 2500MHz Operation * Meets IMD Tests with Two Gain States/Single Logic Control Line VREF/PD 1 Logic Control 6 SELECT GND1 2 5 GND2 RF IN 3 4 RF OUT Ordering Information RF2369 3V Low Noise Amplifier/ 3V PA Driver Amplifier RF2369PCBA-41X Fully Assembled Evaluation Board (LNA) Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev B2 061016 4-401 RF2369 Absolute Maximum Ratings Parameter Supply Voltage Input RF Level Operating Ambient Temperature Storage Temperature Rating -0.5 to +8.0 +10 -40 to +85 -40 to +150 Unit VDC dBm C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Frequency Range Specification Min. Typ. Max. 150 824 to 894 2500 Unit MHz Condition TAMB =25C, VCC =3.0V Cellular Low Noise Amplifier Frequency HIGH GAIN MODE Gain Noise Figure Input IP3 Input VSWR Output VSWR Current Drain BYPASS MODE Gain Input IP3 Input VSWR Output VSWR Current Drain 869 14.0 9.0 15.5 1.6 11.5 894 17.0 2.0 2:1 2:1 10.0 -1 2:1 2:1 4.0 849 15.5 2.0 -65 -70 2:1 2:1 8.5 -3.0 +10 -2.0 +24 -1.0 2:1 2:1 4.0 mA Gain Select>1.8V, VPD/VREF =0V dB dBm 17.0 2.5 MHz Gain Select<0.8V, VPD/VREF =3V dB dB dBm 7.5 -3 +10 -2 +24 mA Gain Select>1.8V, VPD/VREF =0V dB dBm 2.0 824 14.0 4 mA MHz Gain Select<0.8V, VPD/VREF =3V dB dB dBm dBc/30kHz dBc/30kHz Cellular CDMA Driver Frequency HIGH GAIN MODE Gain Noise Figure Output Power ACPR1 ACPR2 Input VSWR Output VSWR Current Drain BYPASS MODE Gain Input IP3 Input VSWR Output VSWR Current Drain POUT =+4dBm, +885kHz offset POUT =+4dBm, +1.98MHz offset 2.0 3 mA V V V Power Supply Voltage (VCC) VSELECT Low VSELECT High Power Down 1.8 0 10 0.8 High Gain mode. Select<0.8V, VPD/VREF =3V Low Gain mode. Select>1.8V, VPD/VREF =0V Gain Select<0.8V, VPD/VREF =0V, VCC =0V A 4-402 Rev B2 061016 RF2369 Bypass Possibility Gain Select >1.8V >1.8V VPD/VREF 0V 3V VCC 3V 3V Current 2.3mA 3.4mA Comments Recommended Bypass Mode Alternative Bypass Mode Rev B2 061016 4-403 RF2369 Pin 1 Function VREF/PD Description For low noise amplifier applications, this pin is used to control the bias current. An external resistor can be used to set the bias current for any VPD voltage. Interface Schematic VREF/PD 2 3 GND1 RF IN Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF input pin. To Bias Circuit RF OUT RF IN 4 RF OUT 5 GND2 Amplifier output pin. This pin is an open-collector output. It must be biased to VCC through a choke or matching inductor. This pin is typically matched to 50 with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. LNA emittance inductance. Total inductance is comprised of package+bondwire+stripline (L1) on PCB. 6 SELECT This pin selects high gain and bypass. Select < 0.8V, high gain. Select > 1.8V, low gain. 4-404 Rev B2 061016 RF2369 Application Schematic Cellular Low Noise Amplifier ~881MHz C1 0.1 F 1 C2 0.1 F 2 50 strip C6 33 nF L3 6.8 nH 3 4 L2 10 nH C3 3 pF 5 Logic Control R1 1.6 k VREF/PD 6 *C7 DNI L1 1.5 nH 50 strip SELECT J1 RF IN J2 RF OUT VCC C5 10 nF C4 100 pF * It is recommended added to initial customer PCBA layout for flexibility to optimize performance. Application Schematic Cellular Driver Amplifier ~836MHz C1 0.1 F 1 C2 0.1 F 2 50 strip C6 33 nF L3 6.8 nH 3 4 L2 10 nH VCC C5 10 nF C4 100 pF 5 C3 3 pF 50 strip Logic Control R1 1.3 k VREF/PD 6 L1 1.5 nH SELECT J1 RF IN J2 RF OUT Rev B2 061016 4-405 RF2369 Evaluation Board Schematic - Cellular LNA (Download Bill of Materials from www.rfmd.com.) P1 P1-1 1 2 P1-3 3 CON3 VCC GND NC P2-3 P2-1 P2 1 2 3 CON3 C1 0.1 F 1 C2 0.1 F 2 50 strip C6 33 nF L3 6.8 nH 3 4 R2* DNI 2366401- VREF GND SELECT R1 1.6 k VREF Logic Control 6 L1 1.5 nH 5 C3 3 pF L2 10 nH 50 strip SELECT J1 RF IN J2 RF OUT VCC C5 10 nF C4 100 pF NOTE: Components with * following reference designator should not be populated on the evaluation board. 4-406 Rev B2 061016 RF2369 Evaluation Board Layout Board Size 1.0" x 1.0" Board Thickness 0.032", Board Material FR-4 Rev B2 061016 4-407 RF2369 High Gain Mode Noise Figure versus VCC, 2.5 Gain (Bypass Mode) versus VCC -2.2 Cellular LNA Cellular LNA -2.3 2.0 -2.4 1.5 Bypass Gain (dB) Noise Figure (dB) -2.5 1.0 -2.6 -2.7 0.5 NF, -30C NF, +25C NF, +85C 0.0 2.5 2.7 2.9 3.1 3.3 3.5 -2.8 TEMP = -30C TEMP = 25C TEMP = 85C -2.9 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 VCC (V) VCC (V) IIP3 (High Gain Mode) versus VCC 14.0 Gain (High Gain Mode) versus VCC 17.0 Cellular LNA Cellular LNA 13.0 16.5 12.0 High Gain Gain (dB) TEMP = -30C TEMP = 25C TEMP = 85C High Gain IIP3 (dB) 11.0 16.0 10.0 15.5 9.0 15.0 TEMP=-30C TEMP=25C TEMP=85C 14.5 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 8.0 7.0 VCC (V) VCC (V) IIP3 (Bypass Mode) versus VCC 29.0 28.0 10.0 27.0 26.0 9.0 Total ICC (High Gain Mode) versus VCC 11.0 Cellular LNA Cellular LNA Bypass IIP3 (dB) 25.0 24.0 23.0 22.0 21.0 TEMP = -30C 20.0 19.0 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 TEMP = 25C TEMP = 85C Total ICC (mA) 8.0 7.0 6.0 5.0 TEMP = -30C TEMP = 25C TEMP = 85C 4.0 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 VCC (V) VCC (V) 4-408 Rev B2 061016 RF2369 Bypass 1.0 0.6 2 .0 High Gain 0.6 Swp Max 6GHz 1.0 Swp Max 6GHz 2. 0 0.8 0 3. 0.8 10.0 10.0 10.0 Swp Min 0.05GHz -10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 .4 -0 . -0 4 -0. 6 -0. 6 Swp Min 0.05GHz -1.0 -0.8 -0.8 Rev B2 061016 -1.0 .0 -2 .0 -2 -4. 0 -5.0 -3 .0 -4. 0 -5.0 -0.2 -0.2 4.0 5.0 0 0 0.2 4.0 5.0 0. 4 -10.0 -3 .0 0. 4 0 3. 4.0 5.0 10.0 0.2 4-409 RF2369 Bypass Mode S11 S11 Bypass Mode 1.0 0 .6 0 .6 HighHigh Gain Mode S11 Gain Mode S11 1.0 Swp Max 6GHz 2. 0 Swp Max 6GHz 2.0 0.8 0 3. 0.8 4 .0 5.0 0.2 0.2 10.0 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 .4 -0 .4 -0 6 - 0. - 0. 6 .0 -2 .0 -2 Swp Min 0.05GHz Swp Min 0.05GHz -1.0 -0.8 -0.8 Bypass Mode S22 S22 Bypass Mode 1.0 0 .6 2. 0 HighHigh Gain Mode S22 Gain Mode S22 0 .6 Swp Max 6GHz 1.0 -1.0 Swp Max 6GHz 2.0 3.0 0.8 0.8 3.0 4 .0 4 .0 5.0 0.2 0.2 10.0 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 .4 -0 .4 -0 - 0. 6 Swp Min 0.05GHz - 0. 6 .0 -2 .0 -2 Swp Min 0.05GHz -0.8 -1.0 -0.8 4-410 -1.0 Rev B2 061016 -5.0 - 4. 0 -3 .0 -5.0 -0.2 0 -0.2 -10.0 -5.0 - 4. 0 -3 .0 0. 4 -10.0 -5.0 -0.2 -0.2 5.0 -10.0 0. 4 -10.0 -4. -4. 0 -3 .0 -3 .0 0. 4 0 3. 4 .0 5.0 10.0 0. 4 10.0 |
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